2SB1136R
PNP EPITAXIAL PLANAR SILICON
Transistors Bipolar Bjt Single
TO-220-3 Full Pack
Active
$0.78 / unit (market reference)
MOQ: 385 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | 2SB1136R |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 2 W |
| Supplier Device Package | TO-220ML |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
2SB1136R by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 Full Pack package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for 2SB1136R
Alternatives & Replacements
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All Technical Specifications
| Power - Max | 2 W |
| Transistor Type | PNP |
| Frequency - Transition | 10MHz |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 600mA, 6A |
| Current - Collector (Ic) (Max) | 12 A |
| Current - Collector Cutoff (Max) | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A, 2V |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
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