2SD1913S
NPN SILICON TRANSISTOR
Transistors Bipolar Bjt Single
TO-220-3 Full Pack
Obsolete
$0.17 / unit (market reference)
MOQ: 1803 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | 2SD1913S |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Power Dissipation (Max) | 2 W |
| Supplier Device Package | TO-220ML |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
2SD1913S by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 Full Pack package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for 2SD1913S
Alternatives & Replacements
View All →FJPF6806DTU
TRANS NPN 750V 6A TO220F
KSD2012GTU
KSD2012 - NPN EPITAXIAL SILICON
FJPF13007H1TTU
POWER BIPOLAR TRANSISTOR, 8A, NP
FJPF13007H1TTU
POWER BIPOLAR TRANSISTOR, 8A, NP
FJPF3305TU
TRANS NPN 400V 4A TO220F
2SB1274R
TRANS PNP 60V 3A TO220ML
All Technical Specifications
| Power - Max | 2 W |
| Transistor Type | NPN |
| Frequency - Transition | 100MHz |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 2A |
| Current - Collector (Ic) (Max) | 3 A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 500mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
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