PNP EPITAXIAL PLANAR SILICON

Transistors Bipolar Bjt Rf
TO-236-3, SC-59, SOT-23-3
Active
$0.17 / unit (market reference)
MOQ: 1638 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | 2SA1778-3-TB-E |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Power Dissipation (Max) | 250mW |
| Supplier Device Package | 3-CP |
| RoHS | RoHS |
| Part Status | Active |
2SA1778-3-TB-E by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
RF TRANS NPN 15V 5GHZ SOT23-3
NPN TRANSISTOR
RF 0.05A, ULTRA HIGH FREQ BAND
RF TRANS NPN 25V 650MHZ SOT23
RF TRANS NPN 10V 7GHZ 3CP
RF TRANS NPN 15V 5GHZ SOT23-3
| Gain | 13dB |
| Power - Max | 250mW |
| Transistor Type | PNP |
| Frequency - Transition | 1.2GHz |
| Noise Figure (dB Typ @ f) | 2.5dB @ 400MHz |
| Current - Collector (Ic) (Max) | 50mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
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