TPCC8105,L1Q(CM
MOSFET P-CH 30V 23A 8TSON
Transistors Fets Mosfets Single
8-VDFN Exposed Pad
U-MOSVI
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | TPCC8105,L1Q(CM |
| Package / Case | 8-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 7.8mOhm @ 11.5A, 10V |
| Vgs(th) (Max) | 2V @ 500µA |
| Gate Charge (Qg) | 76 nC @ 10 V |
| Input Capacitance (Ciss) | 3240 pF @ 10 V |
| Power Dissipation (Max) | 700mW (Ta), 30W (Tc) |
| Drive Voltage | 4.5V, 10V |
| Supplier Device Package | 8-TSON Advance (3.3x3.3) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
TPCC8105,L1Q(CM by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-VDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 7.8mOhm @ 11.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for TPCC8105,L1Q(CM
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All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | +20V, -25V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2V @ 500µA |
| Rds On (Max) @ Id, Vgs | 7.8mOhm @ 11.5A, 10V |
| Power Dissipation (Max) | 700mW (Ta), 30W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 76 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3240 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 23A (Ta) |
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