UPA2800T1L-E1-AY
MOSFET N-CH 30V 17A 8DFN
Transistors Fets Mosfets Single
8-VDFN Exposed Pad
Obsolete
Price available on request
MOQ: 400 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | UPA2800T1L-E1-AY |
| Package / Case | 8-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 7.3mOhm @ 17A, 10V |
| Vgs(th) (Max) | 2.5V @ 1mA |
| Gate Charge (Qg) | 17 nC @ 5 V |
| Input Capacitance (Ciss) | 1770 pF @ 15 V |
| Supplier Device Package | 8-DFN3333 (3.3x3.3) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
UPA2800T1L-E1-AY by Rochester Electronics, LLC is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-VDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 7.3mOhm @ 17A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for UPA2800T1L-E1-AY
Alternatives & Replacements
View All →UPA2802T1L-E2-AY
MOSFET N-CH 20V 18A 8DFN
UPA2810T1L-E2-AY
MOSFET P-CH 30V 13A 8DFN
UPA2726UT1A-E1-AY
MOSFET N-CH 30V 20A 8DFN
MCG30N03A-TP
MOSFET N-CH 30V 30A DFN3333
UPA2803T1L-E2-AY
MOSFET N-CH 20V 20A 8DFN
PML340SN,118
MOSFET N-CH 220V 7.3A DFN3333-8
All Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Rds On (Max) @ Id, Vgs | 7.3mOhm @ 17A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 5 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1770 pF @ 15 V |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta) |
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