UPA2803T1L-E2-AY
MOSFET N-CH 20V 20A 8DFN
Transistors Fets Mosfets Single
8-VDFN Exposed Pad
Obsolete
Price available on request
MOQ: 252 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | UPA2803T1L-E2-AY |
| Package / Case | 8-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Rds On (Max) | 5.8mOhm @ 20A, 4.5V |
| Vgs(th) (Max) | 1.5V @ 1mA |
| Gate Charge (Qg) | 20 nC @ 4 V |
| Input Capacitance (Ciss) | 2450 pF @ 10 V |
| Supplier Device Package | 8-DFN3333 (3.3x3.3) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
UPA2803T1L-E2-AY by Rochester Electronics, LLC is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-VDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 5.8mOhm @ 20A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for UPA2803T1L-E2-AY
Alternatives & Replacements
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UPA2726UT1A-E1-AY
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MCG30N03A-TP
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UPA2800T1L-E1-AY
MOSFET N-CH 30V 17A 8DFN
PML340SN,118
MOSFET N-CH 220V 7.3A DFN3333-8
All Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 20A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 4 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2450 pF @ 10 V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
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