SSM6H19NU,LF
MOSFET N-CH 40V 2A 6UDFN
Transistors Fets Mosfets Single
6-UDFN Exposed Pad
U-MOSVII-H
Active
$0.39 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | SSM6H19NU,LF |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 40 V |
| Rds On (Max) | 185mOhm @ 1A, 8V |
| Vgs(th) (Max) | 1.2V @ 1mA |
| Gate Charge (Qg) | 2.2 nC @ 4.2 V |
| Input Capacitance (Ciss) | 130 pF @ 10 V |
| Power Dissipation (Max) | 1W (Ta) |
| Drive Voltage | 1.8V, 8V |
| Supplier Device Package | 6-UDFN (2x2) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SSM6H19NU,LF by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 40 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-UDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 185mOhm @ 1A, 8V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SSM6H19NU,LF
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.2V @ 1mA |
| Rds On (Max) @ Id, Vgs | 185mOhm @ 1A, 8V |
| Power Dissipation (Max) | 1W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 2.2 nC @ 4.2 V |
| Drain to Source Voltage (Vdss) | 40 V |
| Input Capacitance (Ciss) (Max) @ Vds | 130 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 8V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
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