SQS405ENW-T1_GE3
MOSFET P-CH 12V 16A PPAK1212-8
Transistors Fets Mosfets Single
PowerPAK® 1212-8
Automotive, AEC-Q101, TrenchFET®
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | SQS405ENW-T1_GE3 |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 12 V |
| Rds On (Max) | 20mOhm @ 13.5A, 4.5V |
| Vgs(th) (Max) | 1V @ 250µA |
| Gate Charge (Qg) | 75 nC @ 8 V |
| Input Capacitance (Ciss) | 2650 pF @ 6 V |
| Power Dissipation (Max) | 39W (Tc) |
| Drive Voltage | 2.5V, 4.5V |
| Supplier Device Package | PowerPAK® 1212-8 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SQS405ENW-T1_GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 12 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The PowerPAK® 1212-8 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 20mOhm @ 13.5A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SQS405ENW-T1_GE3
Alternatives & Replacements
View All →SQS420EN-T1_GE3
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SI7119DN-T1-GE3
MOSFET P-CH 200V 3.8A PPAK1212-8
All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 13.5A, 4.5V |
| Power Dissipation (Max) | 39W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 8 V |
| Drain to Source Voltage (Vdss) | 12 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2650 pF @ 6 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
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