SI7108DN-T1-GE3
MOSFET N-CH 20V 14A PPAK1212-8
Transistors Fets Mosfets Single
PowerPAK® 1212-8
TrenchFET®
Active
$1.90 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | SI7108DN-T1-GE3 |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Rds On (Max) | 4.9mOhm @ 22A, 10V |
| Vgs(th) (Max) | 2V @ 250µA |
| Gate Charge (Qg) | 30 nC @ 4.5 V |
| Power Dissipation (Max) | 1.5W (Ta) |
| Drive Voltage | 4.5V, 10V |
| Supplier Device Package | PowerPAK® 1212-8 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SI7108DN-T1-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The PowerPAK® 1212-8 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 4.9mOhm @ 22A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SI7108DN-T1-GE3
Alternatives & Replacements
View All →SQS420EN-T1_GE3
MOSFET N-CH 20V 8A PPAK1212-8
SIS472DN-T1-GE3
MOSFET N-CH 30V 20A PPAK1212-8
SI7617DN-T1-GE3
MOSFET P-CH 30V 35A PPAK1212-8
SI7114ADN-T1-GE3
MOSFET N-CH 30V 35A PPAK 1212-8
SI7119DN-T1-GE3
MOSFET P-CH 200V 3.8A PPAK1212-8
SI7812DN-T1-GE3
MOSFET N-CH 75V 16A PPAK1212-8
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±16V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Rds On (Max) @ Id, Vgs | 4.9mOhm @ 22A, 10V |
| Power Dissipation (Max) | 1.5W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta) |
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