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Vishay SiliconixPowerPAK® 1212-8RoHS

SIS472DN-T1-GE3

MOSFET N-CH 30V 20A PPAK1212-8

SIS472DN-T1-GE3 by Vishay Siliconix
Subcategory

Transistors Fets Mosfets Single

Package

PowerPAK® 1212-8

Series

TrenchFET®

Status

Active

$0.74 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandVishay Siliconix
ModelSIS472DN-T1-GE3
Package / CasePowerPAK® 1212-8
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)8.9mOhm @ 15A, 10V
Vgs(th) (Max)2.5V @ 250µA
Gate Charge (Qg)30 nC @ 10 V
Input Capacitance (Ciss)997 pF @ 15 V
Power Dissipation (Max)3.5W (Ta), 28W (Tc)
Drive Voltage4.5V, 10V
Supplier Device PackagePowerPAK® 1212-8
RoHSRoHS
Part StatusActive

Application & Notes

SIS472DN-T1-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The PowerPAK® 1212-8 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 8.9mOhm @ 15A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA
Rds On (Max) @ Id, Vgs8.9mOhm @ 15A, 10V
Power Dissipation (Max)3.5W (Ta), 28W (Tc)
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds997 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C20A (Tc)

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