SISA10DN-T1-GE3
MOSFET N-CH 30V 30A PPAK1212-8
Transistors Fets Mosfets Single
PowerPAK® 1212-8
TrenchFET®
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | SISA10DN-T1-GE3 |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 3.7mOhm @ 10A, 10V |
| Vgs(th) (Max) | 2.2V @ 250µA |
| Gate Charge (Qg) | 51 nC @ 10 V |
| Input Capacitance (Ciss) | 2425 pF @ 15 V |
| Power Dissipation (Max) | 3.6W (Ta), 39W (Tc) |
| Drive Voltage | 4.5V, 10V |
| Supplier Device Package | PowerPAK® 1212-8 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SISA10DN-T1-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The PowerPAK® 1212-8 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3.7mOhm @ 10A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SISA10DN-T1-GE3
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | +20V, -16V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 10A, 10V |
| Power Dissipation (Max) | 3.6W (Ta), 39W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2425 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
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