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Vishay SiliconixPowerPAK® 1212-8RoHS

SI7405BDN-T1-GE3

MOSFET P-CH 12V 16A PPAK1212-8

SI7405BDN-T1-GE3 by Vishay Siliconix
Subcategory

Transistors Fets Mosfets Single

Package

PowerPAK® 1212-8

Series

TrenchFET®

Status

Obsolete

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandVishay Siliconix
ModelSI7405BDN-T1-GE3
Package / CasePowerPAK® 1212-8
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)12 V
Rds On (Max)13mOhm @ 13.5A, 4.5V
Vgs(th) (Max)1V @ 250µA
Gate Charge (Qg)115 nC @ 8 V
Input Capacitance (Ciss)3500 pF @ 6 V
Power Dissipation (Max)3.6W (Ta), 33W (Tc)
Drive Voltage1.8V, 4.5V
Supplier Device PackagePowerPAK® 1212-8
RoHSRoHS
Part StatusObsolete

Application & Notes

SI7405BDN-T1-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 12 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The PowerPAK® 1212-8 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 13mOhm @ 13.5A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeP-Channel
Vgs (Max)±8V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA
Rds On (Max) @ Id, Vgs13mOhm @ 13.5A, 4.5V
Power Dissipation (Max)3.6W (Ta), 33W (Tc)
Gate Charge (Qg) (Max) @ Vgs115 nC @ 8 V
Drain to Source Voltage (Vdss)12 V
Input Capacitance (Ciss) (Max) @ Vds3500 pF @ 6 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C16A (Tc)

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