PC
Nexperia USA Inc.6-UDFN Exposed PadRoHS

PMPB14R0EPX

MOSFET P-CH 30V 9A DFN2020M-6

PMPB14R0EPX by Nexperia USA Inc.
Subcategory

Transistors Fets Mosfets Single

Package

6-UDFN Exposed Pad

Series

TrenchMOS™

Status

Active

$0.53 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

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Parameters

ParameterValue
BrandNexperia USA Inc.
ModelPMPB14R0EPX
Package / Case6-UDFN Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)16mOhm @ 8.5A, 10V
Vgs(th) (Max)2V @ 250µA
Gate Charge (Qg)40 nC @ 10 V
Input Capacitance (Ciss)227 pF @ 15 V
Power Dissipation (Max)1.9W (Ta), 12.5W (Tc)
Supplier Device PackageDFN2020MD-6
RoHSRoHS
Part StatusActive

Application & Notes

PMPB14R0EPX by Nexperia USA Inc. is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-UDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 16mOhm @ 8.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeP-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 250µA
Rds On (Max) @ Id, Vgs16mOhm @ 8.5A, 10V
Power Dissipation (Max)1.9W (Ta), 12.5W (Tc)
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds227 pF @ 15 V
Current - Continuous Drain (Id) @ 25°C9A (Ta)

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