MSC040SMA120S
SICFET N-CH 1200V 64A TO268
Transistors Fets Mosfets Single
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Active
$22.94 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Microchip Technology |
| Model | MSC040SMA120S |
| Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 1200 V |
| Rds On (Max) | 50mOhm @ 40A, 20V |
| Vgs(th) (Max) | 2.6V @ 2mA |
| Gate Charge (Qg) | 137 nC @ 20 V |
| Input Capacitance (Ciss) | 1990 pF @ 1000 V |
| Power Dissipation (Max) | 303W |
| Drive Voltage | 20V |
| Supplier Device Package | D3PAK |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
MSC040SMA120S by Microchip Technology is an N-channel power MOSFET rated at 1200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-268-3, D³Pak (2 Leads + Tab), TO-268AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 50mOhm @ 40A, 20V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for MSC040SMA120S
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | +23V, -10V |
| Technology | SiCFET (Silicon Carbide) |
| Vgs(th) (Max) @ Id | 2.6V @ 2mA |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 40A, 20V |
| Power Dissipation (Max) | 303W |
| Gate Charge (Qg) (Max) @ Vgs | 137 nC @ 20 V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1990 pF @ 1000 V |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 64A (Tc) |
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