SCT2H12NYTB
SICFET N-CH 1700V 4A TO268
Transistors Fets Mosfets Single
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Active
$5.80 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rohm Semiconductor |
| Model | SCT2H12NYTB |
| Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 1700 V |
| Rds On (Max) | 1.5Ohm @ 1.1A, 18V |
| Vgs(th) (Max) | 4V @ 410µA |
| Gate Charge (Qg) | 14 nC @ 18 V |
| Input Capacitance (Ciss) | 184 pF @ 800 V |
| Power Dissipation (Max) | 44W (Tc) |
| Drive Voltage | 18V |
| Supplier Device Package | TO-268 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SCT2H12NYTB by Rohm Semiconductor is an N-channel power MOSFET rated at 1700 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-268-3, D³Pak (2 Leads + Tab), TO-268AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.5Ohm @ 1.1A, 18V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SCT2H12NYTB
Alternatives & Replacements
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SCT2750NYTB
SICFET N-CH 1700V 5.9A TO268
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | +22V, -6V |
| Technology | SiCFET (Silicon Carbide) |
| Vgs(th) (Max) @ Id | 4V @ 410µA |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.1A, 18V |
| Power Dissipation (Max) | 44W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 18 V |
| Drain to Source Voltage (Vdss) | 1700 V |
| Input Capacitance (Ciss) (Max) @ Vds | 184 pF @ 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
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