APT4F120S
MOSFET N-CH 1200V 4A D3PAK
Transistors Fets Mosfets Single
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
POWER MOS 8™
Active
$4.45 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Microchip Technology |
| Model | APT4F120S |
| Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 1200 V |
| Rds On (Max) | 4.2Ohm @ 2A, 10V |
| Vgs(th) (Max) | 5V @ 500µA |
| Gate Charge (Qg) | 43 nC @ 10 V |
| Input Capacitance (Ciss) | 1385 pF @ 25 V |
| Power Dissipation (Max) | 175W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | D3PAK |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
APT4F120S by Microchip Technology is an N-channel power MOSFET rated at 1200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-268-3, D³Pak (2 Leads + Tab), TO-268AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 4.2Ohm @ 2A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for APT4F120S
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 5V @ 500µA |
| Rds On (Max) @ Id, Vgs | 4.2Ohm @ 2A, 10V |
| Power Dissipation (Max) | 175W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1385 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
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