ZXMN3AMCTA
MOSFET 2N-CH 30V 2.9A DFN
Transistors Fets Mosfets Arrays
8-WDFN Exposed Pad
Automotive, AEC-Q101
Active
$0.95 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Diodes Incorporated |
| Model | ZXMN3AMCTA |
| Package / Case | 8-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) | 120mOhm @ 2.5A, 10V |
| Vgs(th) (Max) | 3V @ 250µA |
| Gate Charge (Qg) | 2.3nC @ 4.5V |
| Input Capacitance (Ciss) | 190pF @ 25V |
| Power Dissipation (Max) | 1.7W |
| Supplier Device Package | DFN3020B-8 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
ZXMN3AMCTA by Diodes Incorporated is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-WDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 120mOhm @ 2.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for ZXMN3AMCTA
Alternatives & Replacements
View All →ZXMC3AMCTA
MOSFET N/P-CH 30V 2.9A/2.1A 8DFN
ZXMN2AMCTA
MOSFET 2N-CH 20V 2.9A DFN
NTLLD4951NFTWG
MOSFET 2N-CH 30V 5.5A/6.3A 8WDFN
NTLLD4901NFTWG
MOSFET 2N-CH 30V 5.5A/6.3A 8WDFN
All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Power - Max | 1.7W |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 2.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 2.3nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 3.7A (Ta) |
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