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Yangzhou Yangjie Electronic Technology Co.,Ltd6-UDFN Exposed PadRoHS

YJQ3400A-F1-1100HF

N-CH MOSFET 30V 7.7A DFN2020-6L-

Subcategory

Transistors Fets Mosfets Arrays

Package

6-UDFN Exposed Pad

Status

Active

$0.38 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandYangzhou Yangjie Electronic Technology Co.,Ltd
ModelYJQ3400A-F1-1100HF
Package / Case6-UDFN Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET Type2 N-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Rds On (Max)23mOhm @ 7.7A, 10V
Vgs(th) (Max)1.5V @ 250µA
Gate Charge (Qg)17.25nC @ 10V
Input Capacitance (Ciss)630pF @ 15V
Power Dissipation (Max)2W (Ta)
Supplier Device Package6-DFN (2x2)
RoHSRoHS
Part StatusActive

Application & Notes

YJQ3400A-F1-1100HF by Yangzhou Yangjie Electronic Technology Co.,Ltd is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-UDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 23mOhm @ 7.7A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET Type2 N-Channel (Dual)
Power - Max2W (Ta)
Vgs(th) (Max) @ Id1.5V @ 250µA
Rds On (Max) @ Id, Vgs23mOhm @ 7.7A, 10V
Gate Charge (Qg) (Max) @ Vgs17.25nC @ 10V
Drain to Source Voltage (Vdss)30V
Input Capacitance (Ciss) (Max) @ Vds630pF @ 15V
Current - Continuous Drain (Id) @ 25°C7.7A (Ta)

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