PartsCubeGlobal
Torex Semiconductor LtdTO-236-3, SC-59, SOT-23-3RoHS

XP231N0201TR-G

MOSFET N-CH 30V 200MA

Subcategory

Transistors Fets Mosfets Single

Package

TO-236-3, SC-59, SOT-23-3

Status

Active

$0.35 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandTorex Semiconductor Ltd
ModelXP231N0201TR-G
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)5Ohm @ 10mA, 4.5V
Vgs(th) (Max)1.8V @ 250µA
Gate Charge (Qg)0.18 nC @ 10 V
Input Capacitance (Ciss)6.5 pF @ 10 V
Power Dissipation (Max)400mW (Ta)
Drive Voltage2.5V, 4.5V
RoHSRoHS
Part StatusActive

Application & Notes

XP231N0201TR-G by Torex Semiconductor Ltd is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 5Ohm @ 10mA, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

You may also need

MMFTP84Diotec Semiconductor

MOSFET P-CH 60V 130MA SOT23-3

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.8V @ 250µA
Rds On (Max) @ Id, Vgs5Ohm @ 10mA, 4.5V
Power Dissipation (Max)400mW (Ta)
Gate Charge (Qg) (Max) @ Vgs0.18 nC @ 10 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds6.5 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C200mA (Ta)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.