VT6T11T2R
PNP+PNP GENERAL PURPOSE AMPLIFIC
Transistors Bipolar Bjt Arrays
6-SMD, Flat Leads
Active
$0.50 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rohm Semiconductor |
| Model | VT6T11T2R |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 150mW |
| Supplier Device Package | VMT6 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
VT6T11T2R by Rohm Semiconductor is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-SMD, Flat Leads package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for VT6T11T2R
Alternatives & Replacements
View All →SCH2102-TL-E
BIP PNP+PNP 0.5A 12V
MCH6542-TL-E
TRANS NPN/PNP 30V 0.3A 6MCPH
MCH6534-TL-E
TRANS 2NPN 15V 0.7A 6MCPH
SCH2201-TL-E
TRANSISTOR
VT6X11T2R
NPN+NPN GENERAL PURPOSE AMPLIFIC
VT6T12T2R
TRANS GP BJT PNP 50V 0.1A 6-PIN
All Technical Specifications
| Power - Max | 150mW |
| Transistor Type | 2 PNP (Dual) |
| Frequency - Transition | 350MHz |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Current - Collector (Ic) (Max) | 200mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 2V |
| Voltage - Collector Emitter Breakdown (Max) | 20V |
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