VS-GB75DA120UP
IGBT MODULE 1200V 658W SOT227
Transistors Igbts Modules
SOT-227-4, miniBLOC
Obsolete
Price available on request
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay General Semiconductor - Diodes Division |
| Model | VS-GB75DA120UP |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 658 W |
| Supplier Device Package | SOT-227 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
VS-GB75DA120UP by Vishay General Semiconductor - Diodes Division is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-227-4, miniBLOC package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for VS-GB75DA120UP
Alternatives & Replacements
View All →HGT1N30N60A4D
IGBT, 96A, 600V, N-CHANNEL
VS-GT180DA120U
IGBT MOD 1200V 281A 1087W SOT227
IXGN200N60B3
IGBT MOD 600V 300A 830W SOT227B
IXGN72N60C3H1
IGBT MOD 600V 78A 360W SOT227B
APT85GR120J
IGBT MOD 1200V 116A 543W SOT227
APT60GF120JRD
IGBT NPT COMBI 1200V 60A ISOTOP
All Technical Specifications
| Input | Standard |
| IGBT Type | NPT |
| Power - Max | 658 W |
| Configuration | Single |
| NTC Thermistor | No |
| Vce(on) (Max) @ Vge, Ic | 3.8V @ 15V, 75A |
| Current - Collector Cutoff (Max) | 250 µA |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.