Vishay Siliconix-RoHS
VQ1001P-2
MOSFET 4N-CH 30V 0.83A 14DIP
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
-
Status
Obsolete
Datasheet
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | VQ1001P-2 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 4 N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) | 1.75Ohm @ 200mA, 5V |
| Vgs(th) (Max) | 2.5V @ 1mA |
| Input Capacitance (Ciss) | 110pF @ 15V |
| Power Dissipation (Max) | 2W |
| Supplier Device Package | 14-DIP |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
VQ1001P-2 by Vishay Siliconix is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The - package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.75Ohm @ 200mA, 5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for VQ1001P-2
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All Technical Specifications
| FET Type | 4 N-Channel |
| FET Feature | Logic Level Gate |
| Power - Max | 2W |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Rds On (Max) @ Id, Vgs | 1.75Ohm @ 200mA, 5V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 110pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 830mA |
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