UT6JB5TCR
-40V DUAL PCH+PCH, DFN2020, POWE
Transistors Fets Mosfets Arrays
6-PowerUDFN
Active
$0.75 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rohm Semiconductor |
| Model | UT6JB5TCR |
| Package / Case | 6-PowerUDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 40V |
| Rds On (Max) | 122mOhm @ 3.5A, 10V |
| Vgs(th) (Max) | 2.5V @ 1mA |
| Gate Charge (Qg) | 6.2nC @ 10V |
| Input Capacitance (Ciss) | 265pF @ 20V |
| Power Dissipation (Max) | 2W (Ta) |
| Supplier Device Package | HUML2020L8 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
UT6JB5TCR by Rohm Semiconductor is an N-channel power MOSFET rated at 40V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-PowerUDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 122mOhm @ 3.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for UT6JB5TCR
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All Technical Specifications
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Standard |
| Power - Max | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Rds On (Max) @ Id, Vgs | 122mOhm @ 3.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 6.2nC @ 10V |
| Drain to Source Voltage (Vdss) | 40V |
| Input Capacitance (Ciss) (Max) @ Vds | 265pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Ta) |
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