UPA653TT-E1-A
MOSFET P-CH 30V 2.5A 6WSOF
Transistors Fets Mosfets Single
6-SMD, Flat Leads
Obsolete
$0.36 / unit (market reference)
MOQ: 838 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | UPA653TT-E1-A |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 165mOhm @ 1.5A, 10V |
| Vgs(th) (Max) | 2.5V @ 1mA |
| Gate Charge (Qg) | 3.4 nC @ 10 V |
| Input Capacitance (Ciss) | 175 pF @ 10 V |
| Supplier Device Package | 6-WSOF |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
UPA653TT-E1-A by Rochester Electronics, LLC is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-SMD, Flat Leads package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 165mOhm @ 1.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for UPA653TT-E1-A
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All Technical Specifications
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 1.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 3.4 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 175 pF @ 10 V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
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