MOSFET N-CH 20V 5A 6WSOF

Transistors Fets Mosfets Single
6-SMD, Flat Leads
Obsolete
$0.26 / unit (market reference)
MOQ: 1173 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | UPA621TT-E1-A |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Rds On (Max) | 50mOhm @ 2.5A, 4.5V |
| Vgs(th) (Max) | 1.5V @ 1mA |
| Gate Charge (Qg) | 3.3 nC @ 4 V |
| Input Capacitance (Ciss) | 270 pF @ 10 V |
| Power Dissipation (Max) | 200mW (Ta) |
| Supplier Device Package | 6-WSOF |
| RoHS | RoHS |
| Part Status | Obsolete |
UPA621TT-E1-A by Rochester Electronics, LLC is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-SMD, Flat Leads package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 50mOhm @ 2.5A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 2.5A, 4.5V |
| Power Dissipation (Max) | 200mW (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 3.3 nC @ 4 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 10 V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
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