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Rochester Electronics, LLC8-VDFN Exposed PadRoHS

UPA2810T1L-E2-AY

MOSFET P-CH 30V 13A 8DFN

Subcategory

Transistors Fets Mosfets Single

Package

8-VDFN Exposed Pad

Status

Obsolete

$1.01 / unit (market reference)

MOQ: 298 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelUPA2810T1L-E2-AY
Package / Case8-VDFN Exposed Pad
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)12mOhm @ 13A, 10V
Vgs(th) (Max)2.5V @ 1mA
Gate Charge (Qg)40 nC @ 10 V
Input Capacitance (Ciss)1860 pF @ 10 V
Power Dissipation (Max)1.5W (Ta)
Supplier Device Package8-DFN3333 (3.3x3.3)
RoHSRoHS
Part StatusObsolete

Application & Notes

UPA2810T1L-E2-AY by Rochester Electronics, LLC is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-VDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 12mOhm @ 13A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 1mA
Rds On (Max) @ Id, Vgs12mOhm @ 13A, 10V
Power Dissipation (Max)1.5W (Ta)
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds1860 pF @ 10 V
Current - Continuous Drain (Id) @ 25°C13A (Ta)

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