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Rochester Electronics, LLC8-VDFN Exposed PadRoHS

UPA2802T1L-E2-AY

MOSFET N-CH 20V 18A 8DFN

Subcategory

Transistors Fets Mosfets Single

Package

8-VDFN Exposed Pad

Status

Obsolete

$1.19 / unit (market reference)

MOQ: 252 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelUPA2802T1L-E2-AY
Package / Case8-VDFN Exposed Pad
Mounting TypeSurface Mount
FET TypeN-Channel
Drain to Source Voltage (Vdss)20 V
Rds On (Max)5.8mOhm @ 18A, 10V
Vgs(th) (Max)2.5V @ 1mA
Gate Charge (Qg)16 nC @ 5 V
Input Capacitance (Ciss)1800 pF @ 10 V
Supplier Device Package8-DFN3333 (3.3x3.3)
RoHSRoHS
Part StatusObsolete

Application & Notes

UPA2802T1L-E2-AY by Rochester Electronics, LLC is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-VDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 5.8mOhm @ 18A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 1mA
Rds On (Max) @ Id, Vgs5.8mOhm @ 18A, 10V
Gate Charge (Qg) (Max) @ Vgs16 nC @ 5 V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds1800 pF @ 10 V
Current - Continuous Drain (Id) @ 25°C18A (Ta)

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