TRANS PREBIAS NPN 300MW NS-B1

Transistors Bipolar Bjt Single Pre Biased
3-SIP
Obsolete
Price available on request
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
| Parameter | Value |
|---|---|
| Brand | Panasonic Electronic Components |
| Model | UNR422300A |
| Package / Case | 3-SIP |
| Mounting Type | Through Hole |
| Power Dissipation (Max) | 300 mW |
| Supplier Device Package | NS-B1 |
| RoHS | RoHS |
| Part Status | Obsolete |
UNR422300A by Panasonic Electronic Components is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 3-SIP package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
TRANS PREBIAS PNP 300MW NS-B1
TRANS PREBIAS PNP 300MW NS-B1
TRANS PREBIAS PNP 300MW NS-B1
TRANS PREBIAS PNP 300MW NS-B1
| Power - Max | 300 mW |
| Transistor Type | NPN - Pre-Biased |
| Resistor - Base (R1) | 10 kOhms |
| Frequency - Transition | 200 MHz |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 100mA |
| Current - Collector (Ic) (Max) | 500 mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 100mA, 10V |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
Submit your quantity and details — we will reply within 24 hours.