Panasonic Electronic Components3-SSIPRoHS
UNR412300A
TRANS PREBIAS PNP 300MW NS-B1
Category
Subcategory
Transistors Bipolar Bjt Single Pre Biased
Package
3-SSIP
Status
Obsolete
Datasheet
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Panasonic Electronic Components |
| Model | UNR412300A |
| Package / Case | 3-SSIP |
| Mounting Type | Through Hole |
| Power Dissipation (Max) | 300 mW |
| Supplier Device Package | NS-A1 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
UNR412300A by Panasonic Electronic Components is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 3-SSIP package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for UNR412300A
Alternatives & Replacements
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onsemiStockTO-236-3, SC-59, SOT-23-3
MMUN2238LT1G
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MUN2211T3G
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Diodes IncorporatedStockTO-236-3, SC-59, SOT-23-3
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Rochester Electronics, LLCStock-
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All Technical Specifications
| Power - Max | 300 mW |
| Transistor Type | PNP - Pre-Biased |
| Resistor - Base (R1) | 10 kOhms |
| Frequency - Transition | 200 MHz |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 100mA |
| Current - Collector (Ic) (Max) | 500 mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 100mA, 10V |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
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