UnitedSiC4-PowerTSFNRoHS
UF3SC065040D8S
SICFET N-CH 650V 18A 4DFN
Category
Subcategory
Transistors Fets Mosfets Single
Package
4-PowerTSFN
Status
Obsolete
$11.55 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | UnitedSiC |
| Model | UF3SC065040D8S |
| Package / Case | 4-PowerTSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 650 V |
| Rds On (Max) | 58mOhm @ 20A, 12V |
| Vgs(th) (Max) | 6V @ 10mA |
| Gate Charge (Qg) | 43 nC @ 12 V |
| Input Capacitance (Ciss) | 1500 pF @ 100 V |
| Power Dissipation (Max) | 125W (Tc) |
| Drive Voltage | 12V |
| Supplier Device Package | 4-DFN (8x8) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
UF3SC065040D8S by UnitedSiC is an N-channel power MOSFET rated at 650 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 4-PowerTSFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 58mOhm @ 20A, 12V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
You may also need
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±25V |
| Technology | SiCFET (Cascode SiCJFET) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Rds On (Max) @ Id, Vgs | 58mOhm @ 20A, 12V |
| Power Dissipation (Max) | 125W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 12 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.