UF3C120040K4S
SICFET N-CH 1200V 65A TO247-4
Transistors Fets Mosfets Single
TO-247-4
Active
$29.30 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | UnitedSiC |
| Model | UF3C120040K4S |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 1200 V |
| Rds On (Max) | 45mOhm @ 40A, 12V |
| Vgs(th) (Max) | 6V @ 10mA |
| Gate Charge (Qg) | 43 nC @ 12 V |
| Input Capacitance (Ciss) | 1500 pF @ 100 V |
| Power Dissipation (Max) | 429W (Tc) |
| Drive Voltage | 12V |
| Supplier Device Package | TO-247-4 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
UF3C120040K4S by UnitedSiC is an N-channel power MOSFET rated at 1200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-4 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 45mOhm @ 40A, 12V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for UF3C120040K4S
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±25V |
| Technology | SiCFET (Cascode SiCJFET) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 40A, 12V |
| Power Dissipation (Max) | 429W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 12 V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
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