TSM6N60CH C5G
MOSFET N-CHANNEL 600V 6A TO251
Transistors Fets Mosfets Single
TO-251-3 Short Leads, IPak, TO-251AA
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Taiwan Semiconductor Corporation |
| Model | TSM6N60CH C5G |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 600 V |
| Rds On (Max) | 1.25Ohm @ 3A, 10V |
| Vgs(th) (Max) | 4V @ 250µA |
| Gate Charge (Qg) | 20.7 nC @ 10 V |
| Input Capacitance (Ciss) | 1248 pF @ 25 V |
| Power Dissipation (Max) | 89W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | TO-251 (IPAK) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
TSM6N60CH C5G by Taiwan Semiconductor Corporation is an N-channel power MOSFET rated at 600 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-251-3 Short Leads, IPak, TO-251AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.25Ohm @ 3A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for TSM6N60CH C5G
Alternatives & Replacements
View All →IPU60R2K1CEBKMA1
MOSFET N-CH 600V 2.3A TO251-3
NDD05N50Z-1G
MOSFET N-CH 500V 4.7A IPAK
NTD80N02-001
MOSFET N-CH 24V 80A IPAK
FDU8796
MOSFET N-CH 25V 35A IPAK
IPU50R1K4CEAKMA1
MOSFET N-CH 500V 3.1A TO251-3
NDD02N60Z-1G
MOSFET N-CH 600V 2.2A IPAK
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Rds On (Max) @ Id, Vgs | 1.25Ohm @ 3A, 10V |
| Power Dissipation (Max) | 89W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 20.7 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1248 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
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