What is the minimum order quantity for TSM60NB190CM2 RNG?

MOQ varies by availability. Contact us with your required quantity — we support small-batch and prototype orders. Typical MOQ starts from 2400 pcs.

How long does shipping take for TSM60NB190CM2 RNG?

Standard delivery: 3–7 business days via DHL/FedEx/UPS. We ship from Shenzhen, China to worldwide destinations. Express and economy options available.

Are your electronic components genuine and authentic?

Yes. All components are sourced from authorized distributors and verified suppliers. Each batch is inspected before shipping. We guarantee 100% authentic, brand-new parts.

Can I get a datasheet for TSM60NB190CM2 RNG?

Yes, the datasheet is available. Visit the product page and click the datasheet link, or contact us and we will send it to you directly.

Do you offer samples or prototype quantities for TSM60NB190CM2 RNG?

Yes, we support sample and prototype orders. Tell us your project requirements (quantity, timeline, target price) and we will prepare a tailored quote — usually within 24 hours.

Taiwan Semiconductor CorporationTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

TSM60NB190CM2 RNG

Name: TSM60NB190CM2 RNG
Brand: Taiwan Semiconductor Corporation
SKU: TSM60NB190CM2 RNG

MOSFET N-CH 600V 18A TO263

TSM60NB190CM2 RNG by Taiwan Semiconductor Corporation

Parameters

Parameter	Value
Brand	Taiwan Semiconductor Corporation
Model	TSM60NB190CM2 RNG
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
FET Type	N-Channel
Drain to Source Voltage (Vdss)	600 V
Rds On (Max)	190mOhm @ 6A, 10V
Vgs(th) (Max)	4V @ 250µA
Gate Charge (Qg)	31 nC @ 10 V
Input Capacitance (Ciss)	1273 pF @ 100 V
Power Dissipation (Max)	150.6W (Tc)
Drive Voltage	10V
Supplier Device Package	TO-263 (D²Pak)
RoHS	RoHS
Part Status	Active

Application & Notes

TSM60NB190CM2 RNG by Taiwan Semiconductor Corporation is an N-channel power MOSFET rated at 600 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 190mOhm @ 6A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4V @ 250µA
Rds On (Max) @ Id, Vgs	190mOhm @ 6A, 10V
Power Dissipation (Max)	150.6W (Tc)
Gate Charge (Qg) (Max) @ Vgs	31 nC @ 10 V
Drain to Source Voltage (Vdss)	600 V
Input Capacitance (Ciss) (Max) @ Vds	1273 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	18A (Tc)

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