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Taiwan Semiconductor CorporationTO-251-3 Short Leads, IPak, TO-251AARoHS

TSM60N600CH C5G

MOSFET N-CHANNEL 600V 8A TO251

TSM60N600CH C5G by Taiwan Semiconductor Corporation
Subcategory

Transistors Fets Mosfets Single

Package

TO-251-3 Short Leads, IPak, TO-251AA

Status

Not For New Designs

$0.81 / unit (market reference)

MOQ: 15000 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

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Parameters

ParameterValue
BrandTaiwan Semiconductor Corporation
ModelTSM60N600CH C5G
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)600 V
Rds On (Max)600mOhm @ 4A, 10V
Vgs(th) (Max)4V @ 250µA
Gate Charge (Qg)13 nC @ 10 V
Input Capacitance (Ciss)743 pF @ 100 V
Power Dissipation (Max)83W (Tc)
Drive Voltage10V
Supplier Device PackageTO-251 (IPAK)
RoHSRoHS
Part StatusNot For New Designs

Application & Notes

TSM60N600CH C5G by Taiwan Semiconductor Corporation is an N-channel power MOSFET rated at 600 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-251-3 Short Leads, IPak, TO-251AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 600mOhm @ 4A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA
Rds On (Max) @ Id, Vgs600mOhm @ 4A, 10V
Power Dissipation (Max)83W (Tc)
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V
Drain to Source Voltage (Vdss)600 V
Input Capacitance (Ciss) (Max) @ Vds743 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C8A (Tc)

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