TSM600N25ECH C5G
MOSFET N-CHANNEL 250V 8A TO251
Transistors Fets Mosfets Single
TO-251-3 Short Leads, IPak, TO-251AA
Active
$1.03 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Taiwan Semiconductor Corporation |
| Model | TSM600N25ECH C5G |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 250 V |
| Rds On (Max) | 600mOhm @ 4A, 10V |
| Vgs(th) (Max) | 5V @ 250µA |
| Gate Charge (Qg) | 8.4 nC @ 10 V |
| Input Capacitance (Ciss) | 423 pF @ 25 V |
| Power Dissipation (Max) | 52W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | TO-251 (IPAK) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
TSM600N25ECH C5G by Taiwan Semiconductor Corporation is an N-channel power MOSFET rated at 250 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-251-3 Short Leads, IPak, TO-251AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 600mOhm @ 4A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for TSM600N25ECH C5G
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 4A, 10V |
| Power Dissipation (Max) | 52W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 8.4 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 250 V |
| Input Capacitance (Ciss) (Max) @ Vds | 423 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
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