TSM4ND60CI C0G
MOSFET N-CH 600V 4A ITO220
Transistors Fets Mosfets Single
TO-220-3 Full Pack, Isolated Tab
Discontinued at Digi-Key
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Taiwan Semiconductor Corporation |
| Model | TSM4ND60CI C0G |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 600 V |
| Rds On (Max) | 2.2Ohm @ 1.4A, 10V |
| Vgs(th) (Max) | 3.8V @ 250µA |
| Gate Charge (Qg) | 17.2 nC @ 10 V |
| Input Capacitance (Ciss) | 582 pF @ 50 V |
| Power Dissipation (Max) | 41.6W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | ITO-220 |
| RoHS | RoHS |
| Part Status | Discontinued at Digi-Key |
Application & Notes
TSM4ND60CI C0G by Taiwan Semiconductor Corporation is an N-channel power MOSFET rated at 600 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 Full Pack, Isolated Tab package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 2.2Ohm @ 1.4A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for TSM4ND60CI C0G
Alternatives & Replacements
View All →TSM7ND60CI
MOSFET N-CH 600V 7A ITO220
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MOSFET N-CH 650V 7A ITO220
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TSM60NB190CI C0G
MOSFET N-CH 600V 18A ITO220AB
TSM13ND50CI
MOSFET N-CH 500V 13A ITO220
IRFI540GPBF
MOSFET N-CH 100V 17A TO220-3
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3.8V @ 250µA |
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 1.4A, 10V |
| Power Dissipation (Max) | 41.6W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 17.2 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 582 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
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