PC
Taiwan Semiconductor CorporationTO-236-3, SC-59, SOT-23-3RoHS

TSM320N03CX RFG

MOSFET N-CHANNEL 30V 5.5A SOT23

TSM320N03CX RFG by Taiwan Semiconductor Corporation
Subcategory

Transistors Fets Mosfets Single

Package

TO-236-3, SC-59, SOT-23-3

Status

Active

$0.94 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandTaiwan Semiconductor Corporation
ModelTSM320N03CX RFG
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)32mOhm @ 4A, 4.5V
Vgs(th) (Max)900mV @ 250µA
Gate Charge (Qg)8.9 nC @ 4.5 V
Input Capacitance (Ciss)792 pF @ 15 V
Power Dissipation (Max)1.8W (Tc)
Drive Voltage2.5V, 4.5V
Supplier Device PackageSOT-23
RoHSRoHS
Part StatusActive

Application & Notes

TSM320N03CX RFG by Taiwan Semiconductor Corporation is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 32mOhm @ 4A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±12V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id900mV @ 250µA
Rds On (Max) @ Id, Vgs32mOhm @ 4A, 4.5V
Power Dissipation (Max)1.8W (Tc)
Gate Charge (Qg) (Max) @ Vgs8.9 nC @ 4.5 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds792 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C5.5A (Tc)

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