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Taiwan Semiconductor Corporation8-PowerTDFNRoHS

TSM025NB04CR RLG

MOSFET N-CH 40V 24A/161A 8PDFN

TSM025NB04CR RLG by Taiwan Semiconductor Corporation
Subcategory

Transistors Fets Mosfets Single

Package

8-PowerTDFN

Status

Active

Datasheet

View Datasheet ↗

$1.54 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandTaiwan Semiconductor Corporation
ModelTSM025NB04CR RLG
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)40 V
Rds On (Max)2.5mOhm @ 24A, 10V
Vgs(th) (Max)4V @ 250µA
Gate Charge (Qg)113 nC @ 10 V
Input Capacitance (Ciss)7150 pF @ 20 V
Power Dissipation (Max)3.1W (Ta), 136W (Tc)
Drive Voltage10V
Supplier Device Package8-PDFN (5x6)
RoHSRoHS
Part StatusActive

Application & Notes

TSM025NB04CR RLG by Taiwan Semiconductor Corporation is an N-channel power MOSFET rated at 40 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerTDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 2.5mOhm @ 24A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for TSM025NB04CR RLG

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Alternatives & Replacements

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FDMS0352S

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Texas InstrumentsStock8-PowerTDFN

CSD17307Q5A

MOSFET N-CH 30V 14A/73A 8VSON

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Rochester Electronics, LLCStock8-PowerTDFN

FDMS0349

POWER FIELD-EFFECT TRANSISTOR

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Texas InstrumentsStock8-PowerTDFN

CSD17555Q5A

MOSFET N-CH 30V 24A/100A 8VSON

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA
Rds On (Max) @ Id, Vgs2.5mOhm @ 24A, 10V
Power Dissipation (Max)3.1W (Ta), 136W (Tc)
Gate Charge (Qg) (Max) @ Vgs113 nC @ 10 V
Drain to Source Voltage (Vdss)40 V
Input Capacitance (Ciss) (Max) @ Vds7150 pF @ 20 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C24A (Ta), 161A (Tc)

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