TQM130NB06CR RLG
MOSFET N-CH 60V 10A/50A 8PDFNU
Transistors Fets Mosfets Single
8-PowerTDFN
Automotive, AEC-Q101
Active
$3.05 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Taiwan Semiconductor Corporation |
| Model | TQM130NB06CR RLG |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount, Wettable Flank |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 60 V |
| Rds On (Max) | 13mOhm @ 10A, 10V |
| Vgs(th) (Max) | 3.8V @ 250µA |
| Gate Charge (Qg) | 40 nC @ 10 V |
| Input Capacitance (Ciss) | 2234 pF @ 30 V |
| Power Dissipation (Max) | 3.1W (Ta), 83W (Tc) |
| Drive Voltage | 7V, 10V |
| Supplier Device Package | PDFN56U |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
TQM130NB06CR RLG by Taiwan Semiconductor Corporation is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerTDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 13mOhm @ 10A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for TQM130NB06CR RLG
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3.8V @ 250µA |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 10A, 10V |
| Power Dissipation (Max) | 3.1W (Ta), 83W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2234 pF @ 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 50A (Tc) |
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