Toshiba Semiconductor and Storage8-PowerVDFNRoHS
TPN11006PL,LQ
MOSFET N-CH 60V 26A 8TSON
Category
Subcategory
Transistors Fets Mosfets Single
Package
8-PowerVDFN
Series
U-MOSIX-H
Status
Active
Datasheet
$0.71 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | TPN11006PL,LQ |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 60 V |
| Rds On (Max) | 11.4mOhm @ 13A, 10V |
| Vgs(th) (Max) | 2.5V @ 200µA |
| Gate Charge (Qg) | 17 nC @ 10 V |
| Input Capacitance (Ciss) | 1625 pF @ 30 V |
| Power Dissipation (Max) | 610mW (Ta), 61W (Tc) |
| Drive Voltage | 4.5V, 10V |
| Supplier Device Package | 8-TSON Advance (3.1x3.1) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
TPN11006PL,LQ by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerVDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 11.4mOhm @ 13A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for TPN11006PL,LQ
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 200µA |
| Rds On (Max) @ Id, Vgs | 11.4mOhm @ 13A, 10V |
| Power Dissipation (Max) | 610mW (Ta), 61W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1625 pF @ 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
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