TPH8R903NL,LQ
MOSFET N CH 30V 20A 8SOP
Transistors Fets Mosfets Single
8-PowerVDFN
U-MOSVIII-H
Active
$0.80 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | TPH8R903NL,LQ |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 8.9mOhm @ 10A, 10V |
| Vgs(th) (Max) | 2.3V @ 1mA |
| Gate Charge (Qg) | 9.8 nC @ 10 V |
| Input Capacitance (Ciss) | 820 pF @ 15 V |
| Power Dissipation (Max) | 1.6W (Ta), 24W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | 8-SOP Advance (5x5) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
TPH8R903NL,LQ by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerVDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 8.9mOhm @ 10A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for TPH8R903NL,LQ
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Rds On (Max) @ Id, Vgs | 8.9mOhm @ 10A, 10V |
| Power Dissipation (Max) | 1.6W (Ta), 24W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 9.8 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 820 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
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