Transphorm2-PowerTSFNRoHS
TP65H150G4LSG
GAN FET N-CH 650V PQFN
Category
Subcategory
Transistors Fets Mosfets Single
Package
2-PowerTSFN
Status
Active
Price available on request
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Transphorm |
| Model | TP65H150G4LSG |
| Package / Case | 2-PowerTSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 650 V |
| Rds On (Max) | 180mOhm @ 8.5A, 10V |
| Vgs(th) (Max) | 4.8V @ 500µA |
| Gate Charge (Qg) | 8 nC @ 10 V |
| Input Capacitance (Ciss) | 598 pF @ 400 V |
| Power Dissipation (Max) | 52W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | 2-PQFN (8x8) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
TP65H150G4LSG by Transphorm is an N-channel power MOSFET rated at 650 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 2-PowerTSFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 180mOhm @ 8.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | GaNFET (Gallium Nitride) |
| Vgs(th) (Max) @ Id | 4.8V @ 500µA |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 8.5A, 10V |
| Power Dissipation (Max) | 52W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 598 pF @ 400 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
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