PC
NTE Electronics, IncTO-247-3RoHS

TIP35E

T-NPN SI- PWR AMP

TIP35E by NTE Electronics, Inc
Subcategory

Transistors Bipolar Bjt Single

Package

TO-247-3

Status

Active

$3.92 / unit (market reference)

MOQ: 5 pcs

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Parameters

ParameterValue
BrandNTE Electronics, Inc
ModelTIP35E
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)
Power Dissipation (Max)125 W
Supplier Device PackageTO-247
RoHSRoHS
Part StatusActive

Application & Notes

TIP35E by NTE Electronics, Inc is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

Power - Max125 W
Transistor TypeNPN
Frequency - Transition3MHz
Vce Saturation (Max) @ Ib, Ic5V @ 6.25A, 25A
Current - Collector (Ic) (Max)25 A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 1.5A, 4V
Voltage - Collector Emitter Breakdown (Max)140 V

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