Tagore Technology8-VDFN Exposed PadRoHS
TA9310E
PA RF GAN PWR 20W .03-4GHZ 32V
Category
Subcategory
Transistors Fets Mosfets Rf
Package
8-VDFN Exposed Pad
Status
Active
$49.99 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Tagore Technology |
| Model | TA9310E |
| Package / Case | 8-VDFN Exposed Pad |
| Supplier Device Package | 8-QFN (5x6) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
TA9310E by Tagore Technology is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-VDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| Gain | 17.5dB |
| Frequency | 30MHz ~ 4GHz |
| Current - Test | 100 mA |
| Power - Output | 20W |
| Voltage - Test | 32 V |
| Transistor Type | GaN HEMT |
| Voltage - Rated | 120 V |
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