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STMicroelectronicsTO-247-4RoHS

STW38N65M5-4

MOSFET N-CH 650V 30A TO247-4L

STW38N65M5-4 by STMicroelectronics
Subcategory

Transistors Fets Mosfets Single

Package

TO-247-4

Series

MDmesh™ M5

Status

Active

$6.68 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandSTMicroelectronics
ModelSTW38N65M5-4
Package / CaseTO-247-4
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)650 V
Rds On (Max)95mOhm @ 15A, 10V
Vgs(th) (Max)5V @ 250µA
Gate Charge (Qg)71 nC @ 10 V
Input Capacitance (Ciss)3000 pF @ 100 V
Power Dissipation (Max)190W (Tc)
Drive Voltage10V
Supplier Device PackageTO-247-4
RoHSRoHS
Part StatusActive

Application & Notes

STW38N65M5-4 by STMicroelectronics is an N-channel power MOSFET rated at 650 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-4 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 95mOhm @ 15A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±25V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id5V @ 250µA
Rds On (Max) @ Id, Vgs95mOhm @ 15A, 10V
Power Dissipation (Max)190W (Tc)
Gate Charge (Qg) (Max) @ Vgs71 nC @ 10 V
Drain to Source Voltage (Vdss)650 V
Input Capacitance (Ciss) (Max) @ Vds3000 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C30A (Tc)

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