STL25N60M2-EP
MOSFET N-CH 600V 16A PWRFLAT HV
Transistors Fets Mosfets Single
8-PowerVDFN
MDmesh™ M2-EP
Active
$3.89 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | STMicroelectronics |
| Model | STL25N60M2-EP |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 600 V |
| Rds On (Max) | 205mOhm @ 8A, 10V |
| Vgs(th) (Max) | 4.75V @ 250µA |
| Gate Charge (Qg) | 29 nC @ 10 V |
| Input Capacitance (Ciss) | 1090 pF @ 100 V |
| Power Dissipation (Max) | 125W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | PowerFlat™ (8x8) HV |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
STL25N60M2-EP by STMicroelectronics is an N-channel power MOSFET rated at 600 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerVDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 205mOhm @ 8A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for STL25N60M2-EP
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4.75V @ 250µA |
| Rds On (Max) @ Id, Vgs | 205mOhm @ 8A, 10V |
| Power Dissipation (Max) | 125W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1090 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
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