STHU32N65DM6AG
AUTOMOTIVE-GRADE N-CHANNEL 650 V
Transistors Fets Mosfets Single
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Automotive, AEC-Q101
Active
$8.07 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | STMicroelectronics |
| Model | STHU32N65DM6AG |
| Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 650 V |
| Rds On (Max) | 97mOhm @ 18.5A, 10V |
| Vgs(th) (Max) | 4.75V @ 250µA |
| Gate Charge (Qg) | 52.6 nC @ 10 V |
| Input Capacitance (Ciss) | 2211 pF @ 100 V |
| Power Dissipation (Max) | 320W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | HU3PAK |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
STHU32N65DM6AG by STMicroelectronics is an N-channel power MOSFET rated at 650 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-8, D²Pak (7 Leads + Tab), TO-263CA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 97mOhm @ 18.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for STHU32N65DM6AG
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4.75V @ 250µA |
| Rds On (Max) @ Id, Vgs | 97mOhm @ 18.5A, 10V |
| Power Dissipation (Max) | 320W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 52.6 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2211 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 37A (Tc) |
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