PC
STMicroelectronicsTO-263-8, D²Pak (7 Leads + Tab), TO-263CARoHS

STHU32N65DM6AG

AUTOMOTIVE-GRADE N-CHANNEL 650 V

Subcategory

Transistors Fets Mosfets Single

Package

TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Series

Automotive, AEC-Q101

Status

Active

$8.07 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandSTMicroelectronics
ModelSTHU32N65DM6AG
Package / CaseTO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)650 V
Rds On (Max)97mOhm @ 18.5A, 10V
Vgs(th) (Max)4.75V @ 250µA
Gate Charge (Qg)52.6 nC @ 10 V
Input Capacitance (Ciss)2211 pF @ 100 V
Power Dissipation (Max)320W (Tc)
Drive Voltage10V
Supplier Device PackageHU3PAK
RoHSRoHS
Part StatusActive

Application & Notes

STHU32N65DM6AG by STMicroelectronics is an N-channel power MOSFET rated at 650 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-8, D²Pak (7 Leads + Tab), TO-263CA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 97mOhm @ 18.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±25V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4.75V @ 250µA
Rds On (Max) @ Id, Vgs97mOhm @ 18.5A, 10V
Power Dissipation (Max)320W (Tc)
Gate Charge (Qg) (Max) @ Vgs52.6 nC @ 10 V
Drain to Source Voltage (Vdss)650 V
Input Capacitance (Ciss) (Max) @ Vds2211 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C37A (Tc)

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