Toshiba Semiconductor and Storage6-SMD, Flat LeadsRoHS
SSM6K407TU,LF
MOSFET N-CH 60V 2A UF6
Category
Subcategory
Transistors Fets Mosfets Single
Package
6-SMD, Flat Leads
Status
Active
Datasheet
$0.51 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
✅ 365-Day Warranty🚚 Global Shipping
Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | SSM6K407TU,LF |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 60 V |
| Rds On (Max) | 300mOhm @ 1A, 10V |
| Vgs(th) (Max) | 2V @ 1mA |
| Gate Charge (Qg) | 6 nC @ 10 V |
| Input Capacitance (Ciss) | 150 pF @ 10 V |
| Power Dissipation (Max) | 500mW (Ta) |
| Drive Voltage | 4V, 10V |
| Supplier Device Package | UF6 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SSM6K407TU,LF by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-SMD, Flat Leads package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 300mOhm @ 1A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SSM6K407TU,LF
Alternatives & Replacements
View All →Rochester Electronics, LLCStock6-SMD, Flat Leads
MCH6331-TL-H
POWER FIELD-EFFECT TRANSISTOR
Request QuoteRFQ →
onsemiStock6-SMD, Flat Leads
MCH6337-TL-H
MOSFET P-CH 20V 4.5A 6MCPH
Request QuoteRFQ →
onsemiStock6-SMD, Flat Leads
SCH2825-TL-E
MOSFET N-CH 30V 1.6A 6SCH
Request QuoteRFQ →
onsemiStock6-SMD, Flat Leads
MCH6341-TL-H
MOSFET P-CH 30V 5A 6MCPH
Request QuoteRFQ →
onsemiStock6-SMD, Flat Leads
MCH6431-P-TL-H
MOSFET N-CH 30V 5A MCPH6
Request QuoteRFQ →
onsemiStock6-SMD, Flat Leads
MCH6336-S-TL-E
MOSFET P-CH 12V 5A MCPH6
Request QuoteRFQ →
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 1A, 10V |
| Power Dissipation (Max) | 500mW (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.