PC
Toshiba Semiconductor and StorageSOT-563, SOT-666RoHS

SSM6K208FE,LF

MOSFET N-CH 30V 1.9A ES6

Subcategory

Transistors Fets Mosfets Single

Package

SOT-563, SOT-666

Status

Active

$0.49 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandToshiba Semiconductor and Storage
ModelSSM6K208FE,LF
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Operating Temperature150°C
FET TypeN-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)133mOhm @ 1A, 4V
Vgs(th) (Max)1V @ 1mA
Gate Charge (Qg)1.9 nC @ 4 V
Input Capacitance (Ciss)123 pF @ 15 V
Power Dissipation (Max)500mW (Ta)
Drive Voltage1.8V, 4V
Supplier Device PackageES6
RoHSRoHS
Part StatusActive

Application & Notes

SSM6K208FE,LF by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-563, SOT-666 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 133mOhm @ 1A, 4V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±12V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 1mA
Rds On (Max) @ Id, Vgs133mOhm @ 1A, 4V
Power Dissipation (Max)500mW (Ta)
Gate Charge (Qg) (Max) @ Vgs1.9 nC @ 4 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds123 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4V
Current - Continuous Drain (Id) @ 25°C1.9A (Ta)

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