Toshiba Semiconductor and StorageSOT-563, SOT-666RoHS
SSM6J213FE(TE85L,F
MOSFET P CH 20V 2.6A ES6
Category
Subcategory
Transistors Fets Mosfets Single
Package
SOT-563, SOT-666
Series
U-MOSVI
Status
Active
Datasheet
$0.49 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
✅ 365-Day Warranty🚚 Global Shipping
Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | SSM6J213FE(TE85L,F |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Rds On (Max) | 103mOhm @ 1.5A, 4.5V |
| Vgs(th) (Max) | 1V @ 1mA |
| Gate Charge (Qg) | 4.7 nC @ 4.5 V |
| Input Capacitance (Ciss) | 290 pF @ 10 V |
| Power Dissipation (Max) | 500mW (Ta) |
| Drive Voltage | 1.5V, 4.5V |
| Supplier Device Package | ES6 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SSM6J213FE(TE85L,F by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-563, SOT-666 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 103mOhm @ 1.5A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SSM6J213FE(TE85L,F
Alternatives & Replacements
View All →onsemiStockSOT-563, SOT-666
SCH1331-S-TL-H
MOSFET P-CH 12V 3A SCH6
Request QuoteRFQ →
onsemiStockSOT-563, SOT-666
SCH1436-TL-H
MOSFET N-CH 30V 1.8A 6SCH
Request QuoteRFQ →
onsemiStockSOT-563, SOT-666
SCH1343-TL-H
MOSFET P-CH 20V 3.5A 6SCH
Request QuoteRFQ →
onsemiStockSOT-563, SOT-666
SCH1345-TL-H
MOSFET P-CH 20V 4.5A SOT563/SCH6
Request QuoteRFQ →
onsemiStockSOT-563, SOT-666
SCH1330-TL-H
MOSFET P-CH 20V 1.5A 6SCH
Request QuoteRFQ →
Rochester Electronics, LLCStockSOT-563, SOT-666
SCH1337-TL-H
P-CHANNEL MOSFET
Request QuoteRFQ →
All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Rds On (Max) @ Id, Vgs | 103mOhm @ 1.5A, 4.5V |
| Power Dissipation (Max) | 500mW (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 4.7 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Ta) |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.